Lowtemperatureoxide

由 T Kim 著作 · 2021 · 被引用 7 次 — Silicon dioxide (SiO2) thin films were prepared by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 150 °C using ...

由 WB Glendinning 著作 · 1973 · 被引用 1 次 — Silicon oxide films have been formed at temperatures as low as 25°C, using a reaction of Si with a vapor mixture containing either NO, HF and H2O or NO, HF, ...

由 CS Tan 著作 · 2004 · 被引用 37 次 — CVD oxide wafers deposited at low temperature to thermal oxide wafer grown at high temperature for the above application. Bonding strength of the bonded ...

由 FP Fehlner 著作 · 1970 · 被引用 719 次 — Low-temperature oxidation is a reaction, occurring at or below room temperature, between a solid and a gas. It usually involves the combination.

由 Y Zhang 著作 · 2021 · 被引用 27 次 — In summary, we demonstrate that a low-temperature MGZO/Ag/MGZO multilayer film fabricated by reactive plasma deposition (for oxides) and ...

由 D Wang 著作 · 2019 · 被引用 239 次 — The as-prepared high entropy oxides possess five highly dispersed metal species, and the average particle size is approximately 5 nm, which is the smallest ...

Thermal oxide deposition is almost always carried out at low pressure (LPCVD). There are several established methods: In the LTO process (low temperature oxide) ...

Common names include silicon oxide, silicon dioxide, silica, SiO2, HTO (high temperature oxide), LTO (low temperature oxide). The growth and deposition ...